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Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

AuthID
P-01B-HCD

Author(s)

Gaspar, D

Martins, J

Bahubalindruni, P

Pereira, L

Fortunato, E

Martins, R

Tipo de Documento

Article

Year published

2018

Publicado

in Advanced Electronic Materials, ISSN: 2199-160X

Volume: 4, Número: 12

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Publication Identifiers

DOI: 10.1002/aelm.201870059

Source Identifiers

ISSN: 2199-160X

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Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

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Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

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