Composition and Luminescence Studies of Ingan Epilayers Grown at Different Hydrogen Flow Rates

AuthID
 P-005-051
10
Author(s)
Taylor, E
·
Fang, F
·
Oehler, F
·
Edwards, PR
·
Kappers, MJ
·
McAleese, C
·
Humphreys, CJ
·
Tipo de Documento
Article
Year published
2013
Publicado
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 28, Número: 6, Páginas: 065011 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-84879375293
Wos: WOS:000320382200011
Source Identifiers
ISSN: 0268-1242
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