Publicações

Depth Profiling of Ion-Implanted Alinn Using Time-Of-Flight Secondary Ion Mass Spectrometry and Cathodoluminescence

AuthID
P-007-FY5

Author(s)

Martin, RW

Rading, D

Kersting, R

Tallarek, E

Nogales, E

Amabile, D

Wang, K

Katchkanov, V

Trager Cowan, C

O'Donnell, KP

Watson, IM

Matias, V

Vantomme, A

Lorenz, K

Alves, E

Editor(es)

Hildebrandt, S; Stutzmann, M

Tipo de Documento

Proceedings Paper

Year published

2006

Publicado

in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6 in PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN: 1610-1634

Volume: 3, Número: 6, Páginas: 1927-1930 (4)

Conference

6Th International Conference on Nitride Semiconductors (Icns-6), Date: AUG 28-SEP 02, 2005, Location: Bremen, GERMANY

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Publication Identifiers

DOI: 10.1002/pssc.200565411

SCOPUS: 2-s2.0-33746364178

Wos: WOS:000239543600129

Source Identifiers

ISSN: 1610-1634

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Depth Profiling of Ion-Implanted Alinn Using Time-Of-Flight Secondary Ion Mass Spectrometry and Cathodoluminescence

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Depth Profiling of Ion-Implanted Alinn Using Time-Of-Flight Secondary Ion Mass Spectrometry and Cathodoluminescence

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