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Analysis of Strain Depth Variations in an In(0.19)Ga(0.81)N Layer by Raman Spectroscopy
AuthID
P-000-RCV
8
Author(s)
Correia, MR
·
Pereira, S
·
Pereira, E
·
Frandon, J
·
Renucci, MA
·
Alves, E
·
Sequeira, AD
·
Franco, N
2
Editor(s)
Hoffmann, A; Rizzi, A
Document Type
Proceedings Paper
Year published
2002
Published
in
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS,
ISSN: 1610-1634
Volume: 0, Issue: 1, Pages: 563-567 (5)
Conference
International Workshop on Nitride Semiconductors (Iwn 2002),
Date:
JUL 22-25, 2002,
Location:
AACHEN, GERMANY,
Sponsors:
Res Ctr Julich, AIXTRON, Deutsch Forsch Gemeinsch, European Off Aerosp Res & Dev, Deutsch Gesell Kristallwachstum & Kristallzucht
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Wos
®
Scopus
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Crossref
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Metadata
Sources
Publication Identifiers
DOI
:
10.1002/pssc.200390114
Scopus
: 2-s2.0-29644436365
Wos
: WOS:000189455300124
Source Identifiers
ISSN
: 1610-1634
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