Influence of Parasitic Capacitances in Modeling and Analysis of Advanced Floating Gate Memory Devices

AuthID
 P-007-RRD
3
Author(s)
Moreira, A
·
Tao, G
Tipo de Documento
Proceedings Paper
Year published
2009
Publicado
in Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Páginas: 302-306
Conference
2009 16Th Ieee International Symposium on the Physical and Failure Analysis of Integrated Circuits, Ipfa 2009, Date: 6 July 2009 through 10 July 2009, Location: Suzhou, Patrocinadores: IEEE Nanjing Section
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Publication Identifiers
SCOPUS: 2-s2.0-71049152490
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