Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

AuthID
 P-007-SDR
11
Author(s)
Pantelides, ST
·
Tsetseris, L
·
Beck, MJ
·
Rashkeev, SN
·
Hadjisavvas, G
·
Batyrev, I
·
Tuttle, B
·
Zhou, XJ
·
Fleetwood, DM
·
Schrimpf, RD
5
Editor(es)
Sah,RE;Deen,JM;Toriumi,A;Zhang,J;Yota,J
Tipo de Documento
Proceedings Paper
Year published
2009
Publicado
in SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10 in ECS Transactions, ISSN: 1938-5862
Volume: 19, Número: 2, Páginas: 319-+ (7)
Conference
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics Held at the 215Th Ecs Meeting, Date: MAY 24-29, 2009, Location: San Francisco, CA, Patrocinadores: Electrochem Soc
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Publication Identifiers
SCOPUS: 2-s2.0-76549122967
Wos: WOS:000273338000017
Source Identifiers
ISSN: 1938-5862
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