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Photoluminescence and Lattice Location of Eu and Pr Implanted Gan Samples
AuthID
P-000-SMT
8
Author(s)
Monteiro, T
·
Boemare, C
·
Soares, MJ
·
Ferreira, RAS
·
Carlos, LD
·
Lorenz, K
·
Vianden, R
·
Alves, E
Document Type
Article
Year published
2001
Published
in
PHYSICA B-CONDENSED MATTER,
ISSN: 0921-4526
Volume: 308, Pages: 22-25 (4)
Conference
21St International Conference on Defects in Semiconductors,
Date:
JUL 16-20, 2001,
Location:
GIESSEN, GERMANY
Indexing
Wos
®
Scopus
®
Crossref
®
78
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/s0921-4526(01)00656-1
Scopus
: 2-s2.0-0345409195
Wos
: WOS:000173660100006
Source Identifiers
ISSN
: 0921-4526
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