High-Gain Amplifier with N-Type Transistors

AuthID
P-008-JTP
Tipo de Documento
Proceedings Paper
Year published
2013
Publicado
in 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) in IEEE Conference on Electron Devices and Solid-State Circuits
Conference
Ieee International Conference of Electron Devices and Solid-State Circuits (Edssc), Date: JUN 03-05, 2013, Location: Hong Kong, PEOPLES R CHINA
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84890482228
Wos: WOS:000380585600172
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