Ambipolar Diffusion Length in A-Si:h(F) and A-Si,Ge:h,F Measured with the Steady-State Photocarrier Grating Technique

AuthID
P-008-XMZ
8
Author(s)
Liu, JZ
·
Li, X
·
Roca i Cabarrocas, P
·
Maruyama, A
·
Park, H
·
Wagner, S
·
Delahoy, AE
Tipo de Documento
Proceedings Paper
Year published
1990
Publicado
in Conference Record of the IEEE Photovoltaic Specialists Conference, ISSN: 0160-8371
Volume: 2, Páginas: 1606-1609
Conference
Twenty First Ieee Photovoltaic Specialists Conference - 1990 Part 2 (Of 2), Date: 21 May 1990 through 25 May 1990, Location: Kissimimee, FL, USA, Patrocinadores: IEEE Electron Devices Soc
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0025420404
Source Identifiers
ISSN: 0160-8371
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