Dose Rate Dependence of Residual Defects in Device Grade Si/Sige Heterostructures Formed by Ion Beam Synthesis

AuthID
 P-009-2TS
6
Author(s)
Nejim, A
·
Cristiano, F
·
Knights, AP
·
Coleman, PG
Tipo de Documento
Proceedings Paper
Year published
1999
Publicado
in Proceedings of the International Conference on Ion Implantation Technology
Volume: 2, Páginas: 692-695
Conference
Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (Iit'98), Date: 22 June 1998 through 26 June 1998, Location: Kyoto, Jpn
Indexing
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0033334733
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