Europium-Doped Gan(Mg): Beyond the Limits of the Light-Emitting Diode

AuthID
 P-009-C4F
6
Author(s)
Edwards, PR
·
Kappers, MJ
·
Bockowski, M
4
Editor(es)
Eddy, CR; Kuball, M; Koleske, DD; Amano, H
Tipo de Documento
Proceedings Paper
Year published
2014
Publicado
in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351
Volume: 11, Número: 3-4, Páginas: 662-665 (4)
Conference
10Th International Conference on Nitride Semiconductors (Icns), Date: AUG 25-30, 2013, Location: Washington, DC, Patrocinadores: Off Naval Res, Army Res Off, Sandia Natl Lab, Natl Sci Fdn, Zeiss, Nichia, Laytec, Nitride Semicond Fdn Japan, Aixtron, Osram, Plasma Therm, Crystal IS, Dow Elect Mat
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Publication Identifiers
SCOPUS: 2-s2.0-84898549628
Wos: WOS:000346071300072
Source Identifiers
ISSN: 1862-6351
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