Origin of the Lattice Sites Occupied by Implanted Co in Si

AuthID
P-00A-0YK
Tipo de Documento
Article
Year published
2014
Publicado
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 29, Número: 12, Páginas: 125006 (5)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84911911737
Wos: WOS:000345454900019
Source Identifiers
ISSN: 0268-1242
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