A Comparative Study of N-P Gan/Sic Heterojunction and P-N 6H-Sic Homojunction Diodes

AuthID
P-001-27J
7
Author(s)
Vacas, J
·
Lahreche, H
·
Gaspar, C
·
Pereira, E
·
Brylinski, C
·
di Forte Poisson, MA
3
Editor(es)
Carter,CH;Devaty,RP;Rohrer,GS
Tipo de Documento
Article
Year published
2000
Publicado
in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 in MATERIALS SCIENCE FORUM, ISSN: 0255-5476
Volume: 338-3, Páginas: 1651-1654 (4)
Conference
International Conference on Silicon Carbide and Related Materials, Date: OCT 10-15, 1999, Location: RES TRIANGLE PK, NORTH CAROLINA, Patrocinadores: NASA, Glenn Res Ctr, USAF, Res Lab, mat & Mfg Directoirate, USN, Off Res, Def Res & Engn, Cree Inc, Charles & Colvard Inc, ABB Semicond, Sterling Semicond Inc, ATMI Inc, Epigress AB, Aixtron AG, Northrop Grumman, Siemens AG, EMCORE Inc, GE, Corp R & D, Litton Airton, II-VI Inc
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0343878042
Wos: WOS:000165996700400
Source Identifiers
ISSN: 0255-5476
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