Strain Relaxation Mechanisms in Si1-Xgex Layers Grown by Solid-Phase Epitaxy: Influence of the Layer Composition and Growth Temperature

AuthID
 P-001-56H
6
Author(s)
Rodriguez, A
·
Rodriguez, T
·
Da Silva, MF
·
Ballesteros, C
Tipo de Documento
Article
Year published
1999
Publicado
in JOURNAL OF ELECTRONIC MATERIALS, ISSN: 0361-5235
Volume: 28, Número: 2, Páginas: 77-82 (6)
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Publication Identifiers
SCOPUS: 2-s2.0-0033078074
Wos: WOS:000078469800001
Source Identifiers
ISSN: 0361-5235
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