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Photoluminescence Between 3.36 Ev and 3.41 Ev from Gan Epitaxial Layers
AuthID
P-001-6C0
P-001-6C0
6
Author(s)
4
Editor(es)
Binari, SC; Burk, AA; Melloch, MR; Nguyen, C
Tipo de Documento
Proceedings Paper
Year published
1999
Publicado
in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 572, Páginas: 419-425 (7)
Conference
Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 Mrs Spring Meeting, Date: APR 05-08, 1999, Location: SAN FRANCISCO, CA, Patrocinadores: Mat Res Soc, Air Force Res Labs, DARPA, ODDR&E(R), Army Res Off
Publication Identifiers
SCOPUS: 2-s2.0-0033322585
Wos: WOS:000083014400066
Source Identifiers
ISSN: 0272-9172
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