Time Resolved Spectroscopy of Mid-Band-Gap Emissions in Si-Doped Gan

AuthID
 P-001-7T8
7
Author(s)
Seitz, R
·
Leroux, M
·
Beaumont, B
·
Gibart, P
Tipo de Documento
Article
Year published
1998
Publicado
in JOURNAL OF CRYSTAL GROWTH, ISSN: 0022-0248
Volume: 189, Páginas: 546-550 (5)
Conference
2Nd International Conference on Nitride Semiconductors (Icns 97), Date: OCT 27-31, 1997, Location: TOKUSHIMA CITY, JAPAN, Patrocinadores: Japan Soc Appl Phys, Inst Electr Informat & Commun Engineers, IEEE, Electron Devices Soc
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Publication Identifiers
SCOPUS: 2-s2.0-0032090873
Wos: WOS:000074730400112
Source Identifiers
ISSN: 0022-0248
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