Selective Area Vapor-Phase Epitaxy and Structural Properties of Hg1-Xcdxte on Sapphire

AuthID
P-001-AZ5
9
Author(s)
Munoz, V
·
Bernardi, S
·
Espeso, JI
·
daSilva, MF
·
Marin, C
·
Dieguez, E
Tipo de Documento
Article
Year published
1997
Publicado
in JOURNAL OF CRYSTAL GROWTH, ISSN: 0022-0248
Volume: 179, Número: 3-4, Páginas: 585-591 (7)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0031209041
Wos: WOS:A1997XT42900033
Source Identifiers
ISSN: 0022-0248
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