Strain Compensation by Heavy Boron Doping in Si1-Xgex Layers Grown by Solid Phase Epitaxy

AuthID
 P-001-B57
8
Author(s)
Rodriguez, A
·
Rodriguez, T
·
SanzHervas, A
·
daSilva, MF
·
Ballesteros, C
·
Gwilliam, RM
Tipo de Documento
Article
Year published
1997
Publicado
in JOURNAL OF MATERIALS RESEARCH, ISSN: 0884-2914
Volume: 12, Número: 7, Páginas: 1698-1705 (8)
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Publication Identifiers
SCOPUS: 2-s2.0-0031186554
Wos: WOS:A1997XJ19400007
Source Identifiers
ISSN: 0884-2914
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