Lattice Location of Implanted Nd-147 and Pm-147* in Gan Using Emission Channeling

AuthID
 P-00F-K7Q
4
Author(s)
De Vries, B
·
Vantomme, A
·
Correia, JG
1
Group Author(s)
ISOLDE Collaboration
2
Editor(es)
Hoffmann, A; Rizzi, A
Tipo de Documento
Proceedings Paper
Year published
2002
Publicado
in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS
Páginas: 453-456 (4)
Conference
International Workshop on Nitride Semiconductors (Iwn 2002), Date: JUL 22-25, 2002, Location: AACHEN, GERMANY, Patrocinadores: Res Ctr Julich, AIXTRON, Deutsch Forsch Gemeinsch, European Off Aerosp Res & Dev, Deutsch Gesell Kristallwachstum & Kristallzucht
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Wos®
Publication Identifiers
Wos: WOS:000189455300098
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