The Effect Of Growth Temperature, Delta-Doping And Barrier Composition On Mobilities In Shallow Algaas-Gaas 2-Dimensional Electron Gases

AuthID
 P-00F-KX7
6
Author(s)
HOLLAND, MC
·
SKURAS, E
·
DAVIES, JH
·
LONG, AR
·
STANLEY, CR
Tipo de Documento
Article
Year published
1995
Publicado
in JOURNAL OF CRYSTAL GROWTH, ISSN: 0022-0248
Volume: 150, Número: 1-4, Páginas: 1215-1219 (5)
Conference
8Th International Conference on Molecular Beam Epitaxy, Date: AUG 29-SEP 02, 1994, Location: TOYONAKA, JAPAN, Patrocinadores: Japan Soc Appl Phys, Electrochem Soc Japan, Inst Elect Engineers Japan, Inst Electr Informat & Commun Engineers, Japanese Assoc Crystal Growth, Phys soc Japan, Surface Sci Soc Japan, Vacuum Soc Japan
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Publication Identifiers
SCOPUS: 2-s2.0-0029309649
Wos: WOS:A1995RD43300102
Source Identifiers
ISSN: 0022-0248
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