Edge of the Two-Dimensional Electron Gas in a Gated Heterostructure

AuthID
 P-00F-KY3
2
Author(s)
Davies, JH
Tipo de Documento
Article
Year published
1996
Publicado
in SURFACE SCIENCE, ISSN: 0039-6028
Volume: 361, Número: 1-3, Páginas: 517-520 (4)
Conference
11Th International Conference on the Electronic Properties of 2-Dimensional Systems (Ep2Ds Xi), Date: AUG 07-11, 1995, Location: NOTTINGHAM, ENGLAND, Patrocinadores: Int Union Pure & Appl Phys, Commiss European Communities, Engn & Phys Sci Res Council, UK, Hitachi Ltd, Japan, Matsushita Elect Ind Co Ltd, Japan, Sharp Corp, Japan, Toshiba Corp, Japan, USA, European Res Off, USN, Off Naval Res, Hitachi Cambridge Lab, Sharp Labs Europe, Toshiba Cambridge Res Ctr Ltd, Oxford Instruments Ltd, UK, Cryogenic Ltd, Host: UNIV NOTTINGHAM
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Publication Identifiers
SCOPUS: 2-s2.0-0030189544
Wos: WOS:A1996UZ03300125
Source Identifiers
ISSN: 0039-6028
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