Position-Dependent Electronic Properties of Hydrogenated Amorphous Silicon P-I-N Diodes

AuthID
 P-00F-QHC
3
Author(s)
Lampert, MD
·
Kruhler, W
·
Tipo de Documento
Article
Year published
1994
Publicado
in Journal of Applied Physics, ISSN: 0021-8979
Volume: 75, Número: 4, Páginas: 2110-2114
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Publication Identifiers
SCOPUS: 2-s2.0-0342971528
Source Identifiers
ISSN: 0021-8979
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