Lattice Location Of Er In Gaas And Al0.5Ga0.5As Layers Grown By Mbe On (100) Gaas Substrates

AuthID
 P-001-N0Y
6
Author(s)
DASILVA, MF
·
EVANS, KR
·
JONES, CR
·
MELO, AA
·
Tipo de Documento
Article
Year published
1993
Publicado
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 80-1, Número: PART 1, Páginas: 180-183 (4)
Conference
8Th International Conf On Ion Beam Modification Of Materials, Date: SEP 07-11, 1992, Location: HEIDELBERG, GERMANY, Patrocinadores: MAX PLANCK INST KERNPHYS HEIDELBERG, KERNFORSCHUNGSZENTRUM KARLSRUHE, UNIV HEIDELBERG, MAX PLANCK GESELL, MINIST WISSENSCH & KUNST LANDES BANDEN-HEMBERG, DEUT FORSCHUNGSGEMEINSCH, EUROPEAN MAT RES SOC, INT UNION PURE & APPL PHYS, ANATECH, BAYER
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Publication Identifiers
SCOPUS: 2-s2.0-35848953142
Wos: WOS:A1993LK38000041
Source Identifiers
ISSN: 0168-583X
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