Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and Two Oxygen Atoms in Silicon

AuthID
 P-000-5SP
11
Author(s)
Markevich, VP
·
Murin, LI
·
Lastovskii, SB
·
Medvedeva, IF
·
Lindstrom, JL
·
Peaker, AR
·
Oberg, S
·
5
Editor(s)
Pichaud, B; Claverie, A; Alquier, D; Richter, H; Kittler, M
Document Type
Article
Year published
2005
Published
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI in SOLID STATE PHENOMENA, ISSN: 1012-0394
Volume: 108-109, Pages: 273-278 (6)
Conference
11Th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (Gadest 2005), Date: SEP 25-30, 2005, Location: Giens, FRANCE, Sponsors: TECSEN, CEMES CNRS, LMP
Indexing
Wos®
Scopus®
Publication Identifiers
Scopus: 2-s2.0-34247888366
Wos: WOS:000234198300043
Source Identifiers
ISSN: 1012-0394
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas instituições

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service