Enhanced Resistive Switching and Multilevel Behavior in Bilayered Hfalo/Hfalox Structures for Non-Volatile Memory Applications

AuthID
 P-00J-ZKX
4
Author(s)
Faita, FL
·
Tipo de Documento
Article
Year published
2015
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 107, Número: 24, Páginas: 242105 (5)
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Publication Identifiers
SCOPUS: 2-s2.0-84951129582
Wos: WOS:000367318600029
Source Identifiers
ISSN: 0003-6951
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