A Comparative Study of N-P Gan/Sic Heterojunction and P-N 6H-Sic Homojunction Diodes

AuthID
 P-00K-39Q
7
Author(s)
Vacas, J
·
Lahrèche, H
·
Gaspar, C
·
Pereira, E
·
Brylinski, C
·
di Forte Poisson, MA
3
Editor(es)
Carter,CH;Devaty,RP;Rohrer,GS
Tipo de Documento
Proceedings Paper
Year published
2000
Publicado
in Materials Science Forum, ISSN: 0255-5476
Volume: 338-342, Páginas: 1651-1654
Conference
International Conference on Silicon Carbide and Related Materials, Icscrm 1999, Date: 10 October 1999 through 15 October 1999, Patrocinadores: Air Force Research Laboratory, Materials and Manufacturing Directorate;Cree, Inc.;Director of Defense Research and Engineering;Et al;NASA Glenn Research Center;Office of Naval Research
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Publication Identifiers
SCOPUS: 2-s2.0-84953409705
Source Identifiers
ISSN: 0255-5476
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