A Thermalization Energy Analysis of the Threshold Voltage Shift in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Under Positive Gate Bias Stress

AuthID
 P-00K-9D6
6
Author(s)
Niang, KM
·
Cobb, B
·
Powell, MJ
·
Flewitt, AJ
Document Type
Article
Year published
2016
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 108, Issue: 9, Pages: 093505 (4)
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-84960156514
Wos: WOS:000375329200058
Source Identifiers
ISSN: 0003-6951
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas instituições

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service