Transparent Field-Effect Transistors Based on Aln-Gate Dielectric and Igzo-Channel Semiconductor

AuthID
 P-00K-E38
6
Author(s)
Besleaga, C
·
Stan, GE
·
Pintilie, I
·
Martins, R
Tipo de Documento
Article
Year published
2016
Publicado
in Applied Surface Science, ISSN: 0169-4332
Volume: 379, Páginas: 270-276
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Publication Identifiers
SCOPUS: 2-s2.0-84964546688
Source Identifiers
ISSN: 0169-4332
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