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Anisotropy of Electrical Conductivity in Dc Due to Intrinsic Defect Formation in Alpha-Al2O3 Single Crystal Implanted with Mg Ions

AuthID
P-00K-MS5

Author(s)

Tardio, M

Egana, A

Ramirez, R

Munoz Santiuste, JE

Alves, E

Tipo de Documento

Article

Year published

2016

Publicado

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 379, Páginas: 91-94 (4)

Conference

18Th International Conference on Radiation Effects in Insulators (Rei), Date: OCT 26-31, 2015, Location: Jaipur, INDIA

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Google Scholar^®

Publication Identifiers

DOI: 10.1016/j.nimb.2016.04.012

Wos: WOS:000379093800018

Source Identifiers

ISSN: 0168-583X

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Anisotropy of Electrical Conductivity in Dc Due to Intrinsic Defect Formation in Alpha-Al2O3 Single Crystal Implanted with Mg Ions

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Anisotropy of Electrical Conductivity in Dc Due to Intrinsic Defect Formation in Alpha-Al2O3 Single Crystal Implanted with Mg Ions

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