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Luminescence Due to Mn Doped Gap
AuthID
P-00P-3FX
P-00P-3FX
2
Author(s)
3
Editor(es)
Wolford, DJ; Bernhols, J; Haller, EE
Tipo de Documento
Proceedings Paper
Year published
1990
Publicado
in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in Materials Research Society Symposium Proceedings, ISSN: 0272-9172
Volume: 163, Páginas: 215-218 (4)
Conference
Symp At The 1989 Fall Meeting Of The Materials Research Soc : Impurities,Defects, And Diffusion In Semiconductors : Bulk And Layered Structures, Date: NOV 27-DEC 01, 1989, Location: BOSTON, MA, Patrocinadores: MAT RES SOC, USAF, OFF SCI RES, USN, OFF NAVAL RES, IBM, LAWRENCE BERKELEY LAB, N CAROLINA STATE UNIV
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Publication Identifiers
Wos: WOS:A1990BR53C00036
Source Identifiers
ISSN: 0272-9172
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