Metallic Filamentary Conduction in Valence Change-Based Resistive Switching Devices: The Case of Tao: X Thin Film with X ∼ 1

AuthID
 P-00R-34G
12
Author(s)
Rosário, CMM
·
Schönhals, A
·
Menzel, S
·
Meledin, A
·
Barradas, NP
·
Alves, E
·
Mayer, J
·
Wuttig, M
·
Waser, R
·
Wouters, DJ
Document Type
Article
Year published
2019
Published
in Nanoscale, ISSN: 2040-3364
Volume: 11, Issue: 36, Pages: 16978-16990
Indexing
Scopus®
Pubmed®
Google Scholar®
Publication Identifiers
Pubmed: 31498350
Scopus: 2-s2.0-85072509250
Source Identifiers
ISSN: 2040-3364
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