Growth and Radiation Resistant Properties of 2.7-2.8 Mu M Yb,Er:gsgg Laser Crystal

AuthID
P-002-TDG
8
Author(s)
Luo, JQ
·
Zhang, QL
·
Tipo de Documento
Article
Year published
2011
Publicado
in JOURNAL OF CRYSTAL GROWTH, ISSN: 0022-0248
Volume: 318, Número: 1, Páginas: 669-673 (5)
Conference
16Th International Conference on Crystal Growth (Iccg16)/14Th International Conference on Vapor Growth and Epitaxy (Icvge14), Date: AUG 08-13, 2010, Location: Beijing, PEOPLES R CHINA, Patrocinadores: Int Org Crystal Growth (IOCG), Chinese Assoc Crystal Growth (CASG)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-79952737057
Wos: WOS:000289653900145
Source Identifiers
ISSN: 0022-0248
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