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16Th International Conference on Crystal Growth (Iccg16)/14Th International Conference on Vapor Growth and Epitaxy (Icvge14), Date: AUG 08-13, 2010, Location: Beijing, PEOPLES R CHINA, Patrocinadores: Int Org Crystal Growth (IOCG), Chinese Assoc Crystal Growth (CASG)

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Publication Identifiers

DOI: 10.1016/j.jcrysgro.2010.11.118

SCOPUS: 2-s2.0-79952737057

Wos: WOS:000289653900145

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ISSN: 0022-0248

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Growth and Radiation Resistant Properties of 2.7-2.8 Mu M Yb,Er:gsgg Laser Crystal

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Growth and Radiation Resistant Properties of 2.7-2.8 Mu M Yb,Er:gsgg Laser Crystal

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