Electrospun Stacked Dual-Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

AuthID
 P-00X-M0H
6
Author(s)
He, B
·
He, G
·
Jiang, SS
·
Liu, JW
·
Martins, R
Document Type
Article in Press
Year published
2022
Published
in ADVANCED ELECTRONIC MATERIALS, ISSN: 2199-160X
Indexing
Wos®
Scopus®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-85143969350
Wos: WOS:000893536700001
Source Identifiers
ISSN: 2199-160X
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas instituições

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service