Photoluminescence Decay in the Ps Time Regime and Structural Properties of Pulsed-Laser Deposited Gan

AuthID
 P-000-E1R
8
Author(s)
Sanguino, P
·
Niehus, M
·
3
Editor(s)
Nielsen,K;Larsen,A;Weyer,G
Document Type
Article
Year published
2003
Published
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 340, Pages: 457-461 (5)
Conference
22Nd International Conference on Defects in Semiconductors (Icds-22), Date: JUL 28-AUG 01, 2003, Location: AARHUS, DENMARK, Host: UNIV AARHUS
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Scopus®
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Handle®
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Publication Identifiers
Scopus: 2-s2.0-0346686017
Wos: WOS:000188300200091
Source Identifiers
ISSN: 0921-4526
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