Incorporation and Stability of Erbium in Sapphire by Ion Implantation

AuthID
 P-001-FAP
6
Author(s)
daSilva, MF
·
vandenHoven, GN
·
Polman, A
·
Melo, AA
·
Soares, JC
3
Editor(s)
Williams, JS; Elliman, RG; Ridgway, MC
Document Type
Proceedings Paper
Year published
1996
Published
in ION BEAM MODIFICATION OF MATERIALS
Pages: 429-432 (4)
Conference
9Th International Conference on Ion Beam Modification of Materials (Ibmm 95), Date: FEB 05-10, 1995, Location: CANBERRA, AUSTRALIA, Sponsors: Austr Natl Univ, Dept Electr Mat Engn, Acad Pr, Harcourt Brace Jovanovich, Alphatech Int Ltd, Austr Mat Res Soc, Balzers Austr P L, Danfysik A S, Elsevier, High Voltage Engn, IBM Austr, Natl Electrostat Corp, Stanton Sci, Host: AUSTR NATL UNIV
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Publication Identifiers
Wos: WOS:A1996BG29U00078
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