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Role of Ga2O3-In2O3-Zno Channel Composition on the Electrical Performance of Thin-Film Transistors

AuthID
P-002-HP6

Author(s)

Olziersky, A

Barquinha, P

Vila, A

Magana, C

Fortunato, E

Morante, JR

Martins, R

Document Type

Article

Year published

2011

Published

in MATERIALS CHEMISTRY AND PHYSICS, ISSN: 0254-0584

Volume: 131, Issue: 1-2, Pages: 512-518 (7)

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Publication Identifiers

DOI: 10.1016/j.matchemphys.2011.10.013

Scopus: 2-s2.0-84860761855

Wos: WOS:000298764800080

Source Identifiers

ISSN: 0254-0584

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Role of Ga2O3-In2O3-Zno Channel Composition on the Electrical Performance of Thin-Film Transistors

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