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Mechanisms of Alinn Growth by Movpe: Modeling and Experimental Study
                        AuthID
P-005-6VW
        P-005-6VW
                        6                    
                    Author(s)
                
                        2                    
                    Editor(s)
                
                Palacios, T; Jena, D            
        Document Type
            
            Proceedings Paper        
    Year published
                
                2008            
        Published
            in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351
                Volume: 5, Issue: 6, Pages: 1688-1690 (3)
                                Conference
                7Th International Conference on Nitride Semiconductors (Icns-7), Date: SEP 16-21, 2007, Location: Las Vegas, NV, Sponsors: Aixtron AG, Rohm & Hass Elect Mat LLC, Akzo Nobel High Pur Metalorgan, Cree Inc, IQE, Nitronex, RFMD, Seoul Semicond Co Ltd, Sony Corp, Toyoda Gosei Co Ltd, Kopin Corp, Mitsubishi Chem Corp, Nichia Corp, Taiyo Nippon Sanso Corp, Veeco Instruments, Air Prod & Chem, Osram Opto Semicond GmbH, SAFC Hitech
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        ISSN: 1862-6351
        
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