Mechanisms of Alinn Growth by Movpe: Modeling and Experimental Study

AuthID
 P-005-6VW
6
Author(s)
Yakovlev, EV
·
Lobanova, AV
·
Talalaev, RA
·
2
Editor(s)
Palacios, T; Jena, D
Document Type
Proceedings Paper
Year published
2008
Published
in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351
Volume: 5, Issue: 6, Pages: 1688-1690 (3)
Conference
7Th International Conference on Nitride Semiconductors (Icns-7), Date: SEP 16-21, 2007, Location: Las Vegas, NV, Sponsors: Aixtron AG, Rohm & Hass Elect Mat LLC, Akzo Nobel High Pur Metalorgan, Cree Inc, IQE, Nitronex, RFMD, Seoul Semicond Co Ltd, Sony Corp, Toyoda Gosei Co Ltd, Kopin Corp, Mitsubishi Chem Corp, Nichia Corp, Taiyo Nippon Sanso Corp, Veeco Instruments, Air Prod & Chem, Osram Opto Semicond GmbH, SAFC Hitech
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Publication Identifiers
Scopus: 2-s2.0-77951251935
Wos: WOS:000256695700063
Source Identifiers
ISSN: 1862-6351
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