Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-Implanted, Mg-Doped Hvpe Gan

AuthID
 P-009-TZ7
6
Author(s)
O'Donnell, KP
·
Edwards, PR
·
Bockowski, M
3
Editor(s)
Ihn, T; Rossler, C; Kozikov, A
Document Type
Proceedings Paper
Year published
2013
Published
in PHYSICS OF SEMICONDUCTORS in AIP Conference Proceedings, ISSN: 0094-243X
Volume: 1566, Pages: 63-+ (2)
Conference
31St International Conference on the Physics of Semiconductors (Icps), Date: JUL 29-AUG 03, 2012, Location: Zurich, SWITZERLAND, Sponsors: ETH Zurich, ETH Board, Int Union Pure & Appl Phys, Swiss Natl Sci Fdn, Swiss Natl Ctr Competence Res, Quantum Sci & Technol, Swiss Natl Ctr Competence Res, Quantum Photon, SPECS, SENSIRION, Swiss Airlines, ATTOCUBE, IBM, ID Quantique
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Publication Identifiers
Scopus: 2-s2.0-84907303386
Wos: WOS:000331793000031
Source Identifiers
ISSN: 0094-243X
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