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High K Laon for Gate Dielectric Application
AuthID
P-014-YYG
P-014-YYG
24
Author(s)
Zhou, HW
·Wang, XP
·Nguyen, BY
·Prabhu, L
·Jiang, J
·Kaushik, V
·Scheaffer, J
·Zavala, M
·Duda, E
·[+4]·
Theodore, D
·Edwards, G
·Gregory, R
·Wang, R
·Yam, H
·Yu, J
·Lu, HB
·Chen, ZH
·Lu, XB
·Liu, ZG
Document Type
Proceedings Paper
Year published
2003
Published
in 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS
Pages: 357-360 (4)
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Publication Identifiers
Wos: WOS:000189450800079
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| Name Order | Name | Name Order | Name | Name Order | Name | ||
|---|---|---|---|---|---|---|---|
| 1 | Zhou, HW; | 2 | Wang, XP; | 3 | Nguyen, BY; | ||
| 4 | Rai, R; | 5 | Prabhu, L; | 6 | Jiang, J; | ||
| 7 | Kaushik, V; | 8 | Scheaffer, J; | 9 | Zavala, M; | ||
| 10 | Duda, E; | 11 | Liu, R; | 12 | Zonner, S; | ||
| 13 | Hradsky, B; | 14 | Fejes, P; | 15 | Theodore, D; | ||
| 16 | Edwards, G; | 17 | Gregory, R; | 18 | Wang, R; | ||
| 19 | Yam, H; | 20 | Yu, J; | 21 | Lu, HB; | ||
| 22 | Chen, ZH; | 23 | Lu, XB; | 24 | Liu, ZG; |
