Vitor José Babau Torres


AuthID: R-000-HKG

Confirmed Publications: 64



51
TITLE: Ab initio modeling of N-H, P-H and As-H defects in ZnSe  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
52
TITLE: Electrical activity of chalcogen-hydrogen defects in silicon
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 67, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 72
IN MY: ORCID
53
TITLE: Electronic properties of vacancy-oxygen complexes in SiGe alloys  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
54
TITLE: Electronic structure of divacancy-hydrogen complexes in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: Workshop on the Physics of Group IV Materials in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 15, ISSUE: 39
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
55
TITLE: Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Resende, A; Briddon, PR;
PUBLISHED: 2003, SOURCE: International Conference on Shallow-Level Centers in Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 235, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
56
TITLE: Vibrational modes of sulfur defects in GaP
AUTHORS: Leigh, RS; Sangster, MJL; Newman, RC; Goss, JP; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
57
TITLE: Mg-H and Be-H complexes in cubic boron nitride
AUTHORS: Pinho, NMC; Torres, VJB ; Jones, R; Briddon, PR; Oberg, S;
PUBLISHED: 2001, SOURCE: Conference on Doping Issues in Wide Band-Gap Semiconductors in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 13, ISSUE: 40
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
58
TITLE: Nitrogen-hydrogen defects in GaP  Full Text
AUTHORS: Dixon, P; Richardson, D; Jones, R; Latham, CD; Oberg, S; Torres, VJB ; Briddon, PR;
PUBLISHED: 1998, SOURCE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, ISSUE: 2
INDEXED IN: Scopus WOS CrossRef: 12
IN MY: ORCID
59
TITLE: Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon
AUTHORS: Leary, P; Jones, R; Oberg, S; Torres, VJB ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW B, VOLUME: 55, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef: 42
IN MY: ORCID
60
TITLE: N-vacancy defects in c-BN and w-BN
AUTHORS: Mota, R; Piquini, P; Torres, V ; Fazzio, A;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID
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