891
TITLE: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing  Full Text
AUTHORS: Marques, JG ; Melo, AA; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K;
PUBLISHED: 1995, SOURCE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
892
TITLE: Hyperfine fields of mercury in single-crystalline cobalt  Full Text
AUTHORS: Marques, JG ; Correia, JG ; Melo, AA; Soares, JC; Alves, E ; da Silva, MF;
PUBLISHED: 1994, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 76, ISSUE: 10
INDEXED IN: CrossRef
893
TITLE: HYPERFINE FIELDS OF MERCURY IN SINGLE-CRYSTALLINE COBALT  Full Text
AUTHORS: MARQUES, JG ; CORREIA, JG ; MELO, AA; SOARES, JC ; ALVES, E ; DASILVA, MF;
PUBLISHED: 1994, SOURCE: 6th Joint Magnetism and Magnetic Materials-Intermag Conference in JOURNAL OF APPLIED PHYSICS, VOLUME: 76, ISSUE: 10
INDEXED IN: Scopus WOS
894
TITLE: The lattice site of Au in Be after 24 h 197mHg isotope implantation and decay  Full Text
AUTHORS: Alves, E ; J.G Correia; J.G Marques; A.A Melo; M.F da Silva; J.C Soares; Haas, H;
PUBLISHED: 1994, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 85, ISSUE: 1-4
INDEXED IN: CrossRef
895
TITLE: THE LATTICE SITE OF AU IN BE AFTER 24-H HG-197M ISOTOPE IMPLANTATION AND DECAY  Full Text
AUTHORS: ALVES, E ; CORREIA, JG ; MARQUES, JG ; MELO, AA; DASILVA, MF; SOARES, JC ; HAAS, H;
PUBLISHED: 1994, SOURCE: 11th International Conference on Ion Beam Analysis (IBA-11) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, ISSUE: 1-4
INDEXED IN: Scopus WOS
896
TITLE: Lattice location and photoluminescence of Er in GaAs and Al0.5Ga0.5As
AUTHORS: Alves, E ; Da Silva, MF; Melo, AA; Soares, JC ; Van Den Hoven, GN; Polman, A; Evans, KR; Jones, CR;
PUBLISHED: 1993, SOURCE: Proceedings of the 1993 Materials Society Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 301
INDEXED IN: Scopus
897
TITLE: LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES  Full Text
AUTHORS: ALVES, E ; DASILVA, MF; EVANS, KR; JONES, CR; MELO, AA; SOARES, JC ;
PUBLISHED: 1993, SOURCE: 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 80-1, ISSUE: PART 1
INDEXED IN: Scopus WOS
898
TITLE: Lattice location of Er in GaAs and Al0.5Ga0.5As layers grown by MBE on (100) GaAs substrates  Full Text
AUTHORS: Alves, E ; M.F da Silva; K.R Evans; C.R Jones; A.A Melo; J.C Soares;
PUBLISHED: 1993, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 80-81
INDEXED IN: CrossRef
899
TITLE: Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon  Full Text
AUTHORS: Alves, E ; M.F Da Silva; J.C Soares; A.A Melo; May, J; Haslar, V; Seidl, P; Feuser, U; Vianden, R;
PUBLISHED: 1991, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 55, ISSUE: 1-4
INDEXED IN: CrossRef
900
TITLE: EPITAXIAL REGROWTH AND LATTICE LOCATION OF INDIUM IMPLANTED IN ARSENIC-PREAMORPHIZED SILICON  Full Text
AUTHORS: ALVES, E ; DASILVA, MF; SOARES, JC ; MELO, AA; MAY, J; HASLAR, V; SEIDL, P; FEUSER, U; VIANDEN, R;
PUBLISHED: 1991, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 55, ISSUE: 1-4
INDEXED IN: Scopus WOS
Page 90 of 91. Total results: 908.