Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 597



591
TITLE: LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES  Full Text
AUTHORS: ALVES, E ; DASILVA, MF; EVANS, KR; JONES, CR; MELO, AA; SOARES, JC ;
PUBLISHED: 1993, SOURCE: 8TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 80-1, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
592
TITLE: EPITAXIAL REGROWTH AND LATTICE LOCATION OF INDIUM IMPLANTED IN ARSENIC-PREAMORPHIZED SILICON  Full Text
AUTHORS: ALVES, E ; DASILVA, MF; SOARES, JC ; MELO, AA; MAY, J; HASLAR, V; SEIDL, P; FEUSER, U; VIANDEN, R;
PUBLISHED: 1991, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 55, ISSUE: 1-4
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
593
TITLE: LATTICE SITE LOCATION AND OUTDIFFUSION OF MERCURY IMPLANTED IN GAAS  Full Text
AUTHORS: SOARES, JC ; MELO, AA; ALVES, E ; DASILVA, MF; GILLIN, WP; SEALY, BJ;
PUBLISHED: 1991, SOURCE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
594
TITLE: VACANCY ACCEPTOR COMPLEXES IN GERMANIUM PRODUCED BY ION-IMPLANTATION  Full Text
AUTHORS: FEUSER, U; VIANDEN, R; ALVES, E ; DASILVA, MF; SZILAGYI, E; PASZTI, F; SOARES, JC ;
PUBLISHED: 1991, SOURCE: 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 59, ISSUE: PART 2
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
595
TITLE: REGROWTH OF INDIUM-IMPLANTED (100), (110) AND (111) SILICON-CRYSTALS STUDIED WITH RUTHERFORD BACKSCATTERING AND PERTURBED ANGULAR-CORRELATION TECHNIQUES  Full Text
AUTHORS: ALVES, E ; DASILVA, MF; MELO, AA; SOARES, JC ; FEUSER, U; VIANDEN, R;
PUBLISHED: 1989, SOURCE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, ISSUE: 1-4
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
596
TITLE: LATTICE LOCATION STUDIES ON HAFNIUM, THALLIUM AND LEAD IMPLANTED MAGNESIUM SINGLE CRYSTALS.
AUTHORS: da Silva, MF; da Silva, MR; Alves, E ; Melo, A; Soares, JC ; Winand, J; Vianden, R;
PUBLISHED: 1984, SOURCE: Surface Engineering: Surface Modification of Materials. in NATO ASI Series, Series E: Applied Sciences, ISSUE: 85
INDEXED IN: Scopus
IN MY: ORCID
597
TITLE: NEW HAFNIUM-BERYLLIUM SYSTEM PRODUCED BY ION IMPLANTATION AND ANNEALING TECHNIQUES.
AUTHORS: Soares, JC ; Melo, AA; DaSilva, MF; Alves, EJ ; Freitag, K; Vianden, R;
PUBLISHED: 1984, SOURCE: Ion Implantation and Ion Beam Processing of Materials, Symposium. in Materials Research Society Symposia Proceedings, VOLUME: 27
INDEXED IN: Scopus
IN MY: ORCID
Page 60 of 60. Total results: 597.

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