Vitor José Babau Torres
AuthID: R-000-HKG
11
TITLE: Multi-phonon (percolation) behavior and local clustering of CdxZn1-xSe-cubic mixed crystals (x <= 0.3): A Raman-ab initio study
AUTHORS: Shoker, MB; Pages, O; Dicko, H; Torres, VJB; Postnikov, AV; Polian, A; Firszt, F; Strzalkowski, K; Naciri, AE; Broch, L; Rao, MN; Rao, R; Maillard, A; Itie, JP;
PUBLISHED: 2019, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 126, ISSUE: 10
AUTHORS: Shoker, MB; Pages, O; Dicko, H; Torres, VJB; Postnikov, AV; Polian, A; Firszt, F; Strzalkowski, K; Naciri, AE; Broch, L; Rao, MN; Rao, R; Maillard, A; Itie, JP;
PUBLISHED: 2019, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 126, ISSUE: 10
12
TITLE: Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
AUTHORS: Capan, I; Brodar, T; Pastuovic, Z; Siegele, R; Ohshima, T; Sato, S; Makino, T; Snoj, L; Radulovic, V; Coutinho, J; Torres, VJB; Demmouche, K;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
AUTHORS: Capan, I; Brodar, T; Pastuovic, Z; Siegele, R; Ohshima, T; Sato, S; Makino, T; Snoj, L; Radulovic, V; Coutinho, J; Torres, VJB; Demmouche, K;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
13
TITLE: Deep level defects in 4H-SiC epitaxial layers
AUTHORS: Ivana Capan; Tomislav Brodar; Takeshi Ohshima; Shin Ichiro Sato; Takahiro Makino; Željko Pastuović; Rainer Siegele; Luka Snoj; Vladimir Radulović; José Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: Materials Science Forum, VOLUME: 924 MSF
AUTHORS: Ivana Capan; Tomislav Brodar; Takeshi Ohshima; Shin Ichiro Sato; Takahiro Makino; Željko Pastuović; Rainer Siegele; Luka Snoj; Vladimir Radulović; José Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: Materials Science Forum, VOLUME: 924 MSF
14
TITLE: A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si
AUTHORS: Wright, E; Coutinho, J; Oberg, S; Torres, VJB;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 29, ISSUE: 6
AUTHORS: Wright, E; Coutinho, J; Oberg, S; Torres, VJB;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 29, ISSUE: 6
15
TITLE: Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations
AUTHORS: Torres, VJB; Hussein, RH; Pages, O; Rayson, MJ;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 8
AUTHORS: Torres, VJB; Hussein, RH; Pages, O; Rayson, MJ;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 8
16
TITLE: Theory of the carbon vacancy in 4H-SiC: Crystal field and pseudo-Jahn-Teller effects
AUTHORS: Coutinho, J; Torres, VJB; Demmouche, K; Oberg, S;
PUBLISHED: 2017, SOURCE: PHYSICAL REVIEW B, VOLUME: 96, ISSUE: 17
AUTHORS: Coutinho, J; Torres, VJB; Demmouche, K; Oberg, S;
PUBLISHED: 2017, SOURCE: PHYSICAL REVIEW B, VOLUME: 96, ISSUE: 17
17
TITLE: Mossbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations Full Text
AUTHORS: Wright, E; Coutinho, J; Oberg, S; Torres, VJB;
PUBLISHED: 2016, SOURCE: 28th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 18
AUTHORS: Wright, E; Coutinho, J; Oberg, S; Torres, VJB;
PUBLISHED: 2016, SOURCE: 28th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 18
18
TITLE: Delamination in composite materials: Measurement, assessment and prediction
AUTHORS: Babu, J; Philip, J; Zacharia, T; Davim, JP;
PUBLISHED: 2015, SOURCE: Machinability of Fibre-Reinforced Plastics, VOLUME: 4
AUTHORS: Babu, J; Philip, J; Zacharia, T; Davim, JP;
PUBLISHED: 2015, SOURCE: Machinability of Fibre-Reinforced Plastics, VOLUME: 4
INDEXED IN: 
Scopus
Scopus19
TITLE: Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions Full Text
AUTHORS: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 3
AUTHORS: Santos, P; Coutinho, J; Torres, VJB; Rayson, MJ; Briddon, PR;
PUBLISHED: 2014, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 105, ISSUE: 3
20
TITLE: GeSi Raman spectra vs. local clustering/anticlustering: Percolation scheme and ab initio calculations Full Text
AUTHORS: Pages, O; Hajj H Hussein; Torres, VJB;
PUBLISHED: 2013, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 114, ISSUE: 3
AUTHORS: Pages, O; Hajj H Hussein; Torres, VJB;
PUBLISHED: 2013, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 114, ISSUE: 3
INDEXED IN: Scopus 
WOS
Scopus WOS