Pierre Ruterana
AuthID: R-006-JQQ
11
TITLE: Structural and optical characterization of Eu-implanted GaN Full Text
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
12
TITLE: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C Full Text
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
AUTHORS: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, ISSUE: 1-3
13
TITLE: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation Full Text
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
14
TITLE: Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation Full Text
AUTHORS: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, ISSUE: 7
AUTHORS: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, ISSUE: 7
15
TITLE: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Full Text
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
16
TITLE: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTHORS: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, ISSUE: 9
AUTHORS: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, ISSUE: 9
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TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
INDEXED IN: 
Scopus 
WOS
Scopus WOS18
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
INDEXED IN: 
CrossRef
CrossRef19
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
INDEXED IN: CrossRef
CrossRef20
TITLE: The atomic structure of defects formed during doping of GaN with rare earth ions Full Text
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
AUTHORS: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLISHED: 2005, SOURCE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, ISSUE: 3
