Marie Pierre Chauvat
AuthID: R-006-JQR
1
TITLE: Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures Full Text
AUTHORS: Fialho, M; Magalhaes, S; Rodrigues, J; Chauvat, MP; Ruterana, P; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
AUTHORS: Fialho, M; Magalhaes, S; Rodrigues, J; Chauvat, MP; Ruterana, P; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: 
WOS
WOS2
TITLE: Implantation damage formation in a-, c- and m-plane GaN Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: 
Scopus WOS
Scopus WOS3
TITLE: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
AUTHORS: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, ISSUE: 16
INDEXED IN: Scopus WOS
Scopus WOS4
TITLE: Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission Full Text
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2015, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 30, ISSUE: 4
5
TITLE: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
