41
TITLE: Identification of stable and metastable forms of VO2 centers in germanium  Full Text
AUTHORS: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef: 3
42
TITLE: Ab-initio modeling of carbon and carbon-hydrogen defects in InAs  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef: 2
43
TITLE: Self-interstitials and Frenkel pairs in electron-irradiated germanium  Full Text
AUTHORS: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef: 1
44
TITLE: Self-interstitial in germanium
AUTHORS: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 99, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef: 40
45
TITLE: Early stage donor-vacancy clusters in germanium  Full Text
AUTHORS: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 17
46
TITLE: Oxygen defects in irradiated germanium  Full Text
AUTHORS: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 1
47
TITLE: Local-density-functional calculations of the vacancy-oxygen center in Ge
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW B, VOLUME: 75, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef: 7
48
TITLE: Ab initio modeling of defect levels in Ge clusters and supercells  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 6
49
TITLE: Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium  Full Text
AUTHORS: Janke, C; Jones, R; Coutinho, J ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 2
50
TITLE: Studies of the VO centre in Ge using first principles cluster calculations  Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 3
Page 5 of 10. Total results: 97.