Patrick R. Briddon
AuthID: R-006-MRG
51
TITLE: Formation energy and migration barrier of a Ge vacancy from ab initio studies Full Text
AUTHORS: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
52
TITLE: Energy levels of atomic hydrogen in germanium from ab-initio calculations Full Text
AUTHORS: Almeida, LM; Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Almeida, LM; Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
53
TITLE: Vacancy-dioxygen centers in Si-rich SiGe alloys Full Text
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
54
TITLE: Ab initio study of CsI and its surface
AUTHORS: Ribeiro, RM; Coutinho, J ; Torres, VJB ; Jones, R; Sque, SJ; Oberg, S; Shaw, MJ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 74, ISSUE: 3
AUTHORS: Ribeiro, RM; Coutinho, J ; Torres, VJB ; Jones, R; Sque, SJ; Oberg, S; Shaw, MJ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 74, ISSUE: 3
55
TITLE: Ab initio modeling of interstitial oxygen in crystalline SiGe alloys Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
56
TITLE: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
57
TITLE: Donor-vacancy complexes in Ge: Cluster and supercell calculations
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
58
TITLE: Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys Full Text
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 14
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 14
59
TITLE: Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
60
TITLE: Theory of anharmonicity on bond-centered hydrogen oscillators in silicon Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Nielsen, BB; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
AUTHORS: Coutinho, J ; Torres, VJB ; Pereira, RN ; Nielsen, BB; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
