11
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures  Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
INDEXED IN: Scopus WOS
12
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
INDEXED IN: CrossRef
13
TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXED IN: Scopus WOS
14
TITLE: Radiation damage in ZnO ion implanted at 15 K  Full Text
AUTHORS: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
15
TITLE: Ferromagnetism and ferromagnetic resonance in mn implanted Si and GaAs
AUTHORS: Sobolev, NA; Oliveira, MA; Amaral, VS ; Neves, A ; Carmo, MC; Wesch, W; Picht, O; Wendler, E; Kaiser, U; Heinrich, J;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
16
TITLE: Damage formation and annealing at low temperatures in ion implanted ZnO  Full Text
AUTHORS: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLISHED: 2005, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 87, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef
17
TITLE: Comparative study of radiation damage in GaN and InGaN by 400 keV Au implantation  Full Text
AUTHORS: Wendler, E; Wesch, W; Alves, E ; Kamarou, A;
PUBLISHED: 2004, SOURCE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
18
TITLE: Three-step amorphisation process in ion-implanted GaN at 15 K  Full Text
AUTHORS: Wendler, E; Kamarou, A; Alves, E ; Gartner, K; Wesch, W;
PUBLISHED: 2003, SOURCE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206
INDEXED IN: Scopus WOS CrossRef
19
TITLE: Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool  Full Text
AUTHORS: Jeynes, C; Barradas, NP ; Marriott, PK; Boudreault, G; Jenkin, M; Wendler, E; Webb, RP;
PUBLISHED: 2003, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef
20
TITLE: Accurate determination of the stopping power of He-4 in Si using Bayesian inference  Full Text
AUTHORS: Barradas, NP ; Jeynes, C; Webb, RP; Wendler, E;
PUBLISHED: 2002, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 194, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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