Robert Francis Jones
AuthID: R-001-FHB
11
TITLE: Interstitial carbon-related defects in Si1-xGex alloys
AUTHORS: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2008, SOURCE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
AUTHORS: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2008, SOURCE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
INDEXED IN: 
Scopus
Scopus12
TITLE: Interstitial carbon-related defects in Si1-xGex alloys
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2008, SOURCE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
AUTHORS: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2008, SOURCE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
INDEXED IN: 
WOS
WOS13
TITLE: Identification of stable and metastable forms of VO2 centers in germanium Full Text
AUTHORS: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTHORS: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
14
TITLE: Self-interstitials and Frenkel pairs in electron-irradiated germanium Full Text
AUTHORS: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTHORS: Carvalho, A; Jones, R; Goss, J; Janke, C; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
15
TITLE: Self-interstitial in germanium
AUTHORS: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 99, ISSUE: 17
AUTHORS: Carvalho, A; Jones, R; Janke, C; Goss, JP; Briddon, PR; Coutinho, J ; Oeberg, S;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 99, ISSUE: 17
16
TITLE: Early stage donor-vacancy clusters in germanium Full Text
AUTHORS: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
AUTHORS: Jose Coutinho ; Vitor J B Torres ; Sven Oberg; Alexandra Carvalho; Colin Janke; Robert Jones; Patrick R Briddon;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
17
TITLE: Oxygen defects in irradiated germanium Full Text
AUTHORS: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
AUTHORS: Carvalho, A; Jones, R; Torres, VJB ; Coutinho, J ; Markevich, V; Oberg, S; Briddon, PR;
PUBLISHED: 2007, SOURCE: 2nd International Workshop on Coordination Action on Defects Relevant to Engineering Silicon-Based Devices in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, VOLUME: 18, ISSUE: 7
18
TITLE: Local-density-functional calculations of the vacancy-oxygen center in Ge
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW B, VOLUME: 75, ISSUE: 11
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Oberg, S; Campanera M C Alsina; Shaw, M; Briddon, PR;
PUBLISHED: 2007, SOURCE: PHYSICAL REVIEW B, VOLUME: 75, ISSUE: 11
19
TITLE: Ab-initio modeling of defects in germanium
AUTHORS: Jones, R; Coutinho, JA ;
PUBLISHED: 2007, SOURCE: Germanium-Based Technologies
AUTHORS: Jones, R; Coutinho, JA ;
PUBLISHED: 2007, SOURCE: Germanium-Based Technologies
20
TITLE: Ab initio modeling of defect levels in Ge clusters and supercells Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
