41
TITLE: Theoretical investigations of the energy levels of defects in germanium
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
42
TITLE: Lattice isotope effects on optical transitions in silicon
AUTHORS: Hayama, S; Davies, G; Tan, J; Coutinho, J ; Jones, R; Itoh, KM;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 70, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 15
43
TITLE: Optically active erbium-oxygen complexes in GaAs  Full Text
AUTHORS: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLISHED: 2004, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 84, ISSUE: 10
INDEXED IN: Scopus WOS CrossRef: 9
44
TITLE: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTHORS: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLISHED: 2004, SOURCE: PHYSICAL REVIEW B, VOLUME: 69, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 31
45
TITLE: The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si  Full Text
AUTHORS: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 12
46
TITLE: Interaction between oxygen and single self-interstitials in silicon  Full Text
AUTHORS: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 5
47
TITLE: Electronic properties of vacancy-oxygen complexes in SiGe alloys  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLISHED: 2003, SOURCE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
INDEXED IN: Scopus WOS CrossRef: 2
48
TITLE: Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
AUTHORS: Coutinho, J ; Andersen, O; Dobaczewski, L; Nielsen, KB; Peaker, AR; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 20
49
TITLE: Electronic structure of divacancy-hydrogen complexes in silicon  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: Workshop on the Physics of Group IV Materials in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 15, ISSUE: 39
INDEXED IN: Scopus WOS CrossRef: 8
50
TITLE: Vibrational modes of sulfur defects in GaP
AUTHORS: Leigh, RS; Sangster, MJL; Newman, RC; Goss, JP; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2003, SOURCE: PHYSICAL REVIEW B, VOLUME: 68, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 1
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